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specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 1 of 12 november 2006 AP603 high dynamic range 7w 28v hbt amplifier product features ? 800 ? 2200 mhz ? +38.5 dbm p1db ? -50 dbc aclr @ 1w p avg ? -51 dbc imd3 @ 1w pep ? 15% efficiency @ 1w p avg ? internal active bias ? internal temp compensation ? capable of handling 7:1 vswr @ 28 vcc, 2.14 ghz, 5.5w cw pout ? lead-free/rohs-compliant 5x6 mm power dfn package applications ? mobile infrastructure ? final stage amplifier for repeaters product description the AP603 is a high dynamic range power amplifier i n a lead-free/rohs-compliant 5x6mm power dfn smt package. the single stage amplifier has 12 db gain , while being able to achieve high performance for 800-2200 mhz applications with up to +38.5 dbm of compressed 1db power. the AP603 uses a high reliability, high voltage ingap/gaas hbt process technology. the device incorporates proprietary bias circuitry to compensa te for variations in linearity and current draw over tempe rature. the module does not require any negative bias volta ge; an internal active bias allows the AP603 to operate di rectly off a commonly used high voltage supply (typically +24 to +32v). an added feature allows the quiescent bias to be adjusted externally to meet specific system require ments. the AP603 is targeted for use as a pre-driver and d river stage amplifier in wireless infrastructure where hi gh linearity and high efficiency is required. this co mbination makes the device an excellent candidate for next ge neration multi-carrier 3g mobile infrastructure. functional diagram imd3 vs. output power vs. icq cw 2-tone signal, 2140 mhz, f = 1 mhz, vcc = 28v, 25 ?c -80 -70 -60 -50 -40 -30 26 28 30 32 34 36 output power, pep (dbm) im d 3 (d b c ) 80 ma 160 ma 260 ma specifications w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw, vcc = +28v, ic q = 160 ma parameter units min typ max operational bandwidth mhz 800 2200 test frequency mhz 2140 output channel power dbm +30 power gain db 11.8 input return loss db 10 output return loss db 8.2 aclr dbc -50 imd3 @ +30 dbm pep dbc -51 pin_vpd current, ipd ma 4 operating current, icc ma 246 collector efficiency % 14.6 output p1db dbm +38.2 quiescent current, icq ma 160 vpd, vbias v +5 vcc v +28 absolute maximum rating parameter rating operating case temperature, t c -40 to +85 oc storage temperature, t stg -55 to +125 oc junction temperature, t j 250 oc rf input power (cw tone), p in input p6db breakdown voltage c-b, bv cbo 80 v @ 0.1 ma breakdown voltage c-e, bv cbo 51 v @ 0.1 ma quiescent bias current, i cq 320 ma power dissipation, p diss 9.5 w operation of this device above any of these parameters ma y cause permanent damage. typical performance w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw, vcc = +28v, icq = 160 ma parameter units typical test frequency mhz 940 1960 2140 channel power dbm +30 +30 +30 power gain db 17 12 11.8 input return loss db 11 19 10 output return loss db 5.5 6.6 8.2 aclr dbc -52 -49 -50 imd3 @ +30 dbm pep dbc -63 -52 -51 operating current, icc ma 217 253 246 collector efficiency % 16.6 14 14.6 output p1db dbm +38.5 +38.5 +38.2 quiescent current, icq ma 160 vpd, vbias v +5 vcc v +28 notes: 1. the reference designs shown in this datasheet have the device optimized for wcdma aclr performance at +25 c. biasing for the amplifier is suggested at vcc = +28v a nd icq = 160 ma to achieve the best tradeoff in terms of efficiency and linea rity. increasing icq will improve upon the device linearity (imd3 and aclr), but will decrease the ef ficiency performance slightly. more information is given in the other parts of this datashee t. 2. the AP603 has been tested for ruggedness to be capable of handling: 7:1 vswr @ +28 vcc, 2140 mhz, 5.5w cw pout, 5:1 vswr @ +30 vcc, 2140 mhz, 5.5w cw pout, 3:1 vswr @ +32 vcc, 2140 mhz, 5.5w cw pout. ordering information part no. description AP603-f high dynamic range 28v 7w hbt amplifier AP603-pcb900 920-960 mhz evaluation board AP603-pcb1960 1930-1990 mhz evaluation board AP603-pcb2140 2110-2170 mhz evaluation board
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 2 of 12 november 2006 AP603 high dynamic range 7w 28v hbt amplifier typical device data s-parameters (v cc = +28 v, v pd = v bias = 5 v, i cq = 160 ma, t = 25 c, unmatched 50 ohm system, calibrated to device le ads) 0 0.5 1 1.5 2 2.5 frequency (ghz) gain / maximum stable gain -10 -5 0 5 10 15 20 25 30 35 40 gain (db) db(|s(2,1)|) db(gmax()) 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 swp max 3.00001ghz swp min 3e-005ghz 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s22 swp max 3.00001ghz swp min 3e-005ghz the gain for the unmatched device in 50 ohm system is shown as the trace in black color. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gai n is shown in the marked red line. the impedance plots are shown from 50 ? 3000 mhz, w ith markers placed at 0.5 ? 3.0 ghz in 0.5 ghz incr ements. freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -2.63 -169.40 25.54 146.01 -40.50 55.97 -1.32 -4 5.78 100 -1.78 -170.62 23.33 132.51 -38.11 39.21 -3.07 - 67.75 200 -0.92 -173.99 19.08 109.79 -36.04 21.60 -5.00 - 104.04 400 -0.64 -177.96 13.40 93.01 -35.59 9.15 -6.06 -12 9.02 600 -0.53 -178.87 9.88 85.15 -35.72 3.39 -5.82 -136 .33 800 -0.52 -178.84 7.52 79.52 -35.90 6.93 -5.38 -138 .25 1000 -0.46 -177.79 5.42 74.40 -35.68 5.88 -4.77 -13 9.20 1200 -0.44 -177.25 4.01 69.71 -35.62 3.23 -4.16 -13 9.65 1400 -0.38 -176.83 2.93 64.99 -35.48 1.79 -3.62 -13 9.95 1600 -0.39 -177.55 2.22 59.81 -35.13 -0.56 -3.12 -1 40.63 1800 -0.48 -179.87 1.77 52.82 -34.75 -4.12 -2.63 -1 42.14 2000 -0.59 175.92 1.54 44.04 -34.21 -10.23 -2.19 -1 44.85 2200 -0.73 170.02 1.41 33.03 -33.63 -18.12 -1.74 -1 49.24 2400 -0.97 163.30 1.23 19.79 -33.13 -29.67 -1.28 -1 55.12 2600 -1.21 157.14 0.75 3.56 -32.89 -43.94 -0.90 -16 2.55 2800 -1.28 153.30 0.03 -14.33 -33.04 -61.10 -0.57 - 170.87 3000 -1.18 152.21 -0.89 -34.56 -33.44 -81.90 -0.45 -178.70 device s-parameters are available for download off of the website at: http://www.wj.com load-pull data test condition: output power = 29.5 dbm, v cc = +28 v, i cq = 160 ma, z s = 50 test signal = w-cdma (par=8.6db @ 0.01% probability ), 2140 mhz the reference plane is at the AP603-pcb2140 eval bo ard?s sma connectors. the plots are shown to detail the optimization of t he aclr performance. gain load-pull aclr load-pull pae load-pull gain max=13.08 db at 76.9-j37.0 acpr1lo min=-50.98 dbc at 57.9-j2.6 p.a.eff max=16.98 % at 34.4-j49.7
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 3 of 12 november 2006 AP603 high dynamic range 7w 28v hbt amplifier application circuit pc board layout pcb material: 0.0147? rogers ultralam 2000, single layer, 1 oz cu, r = 2.45, microstrip line details: width = .042?, s pacing = .050? baseplate configuration notes: 1. please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environmen ts to dissipate the power consumed by the device. the use of a convection fan is also recommen ded in laboratory environments. 2. the area around the module underneath the pcb should not c ontain any soldermask in order to maintain good rf grounding. 3. for proper and safe operation in the laboratory, the power- on sequencing is recommended. evaluation board bias procedure the following bias procedure is recommended to ensu re proper functionality of AP603 in a laboratory en vironment. the sequencing is not required in the final system application. bias. voltage (v) vcc +28 vbias +5 vpd +5 turn-on sequence: 1. attach input and output loads onto the evaluation b oard. 2. turn on power supply vcc = +28v. 3. turn on power supply vbias = +5v. at this point, t he only current drawn by the device is leakage curr ent (< 25ma). 4. turn on power supply vpd = +5v. power supply vcc s hould now be drawing typical icq = 160ma. 5. turn on rf power. turn-off sequence: 1. turn off rf power. 2. turn off power supply vpd = +5v. 3. turn off power supply vbias = +5v. 4. turn off power supply vcc = +28v. notes: 1. vpd is used as a reference for the internal active bias circuitry. it can be used to turn on/off the a mplifier. 2. icq can be adjusted with the resistor r2 from the v pd (+5v) supply and the pin_vpd (pin14) of the ampl ifier. increasing r2 results in a lower icq. icq should not be increased above 320 ma. 3. vbias should be maintained fixed at +5v. ibias will change based on rf input power level.
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 4 of 12 november 2006 AP603 high dynamic range 7w 28v hbt amplifier 920-960 mhz application circuit (AP603-pcb900) typical wcdma performance at 25 c at a channel power of +30 dbm frequency 940 mhz w-cdma channel power +30 dbm power gain 17 db input return loss 11 db output return loss 5.5 db aclr -52 dbc imd3 @ +30 dbm pep -63 dbc operating current, icc 217 ma collector efficiency 16.6 % output p1db +38.5 dbm quiescent current, icq 160 ma vpd, vbias +5 v vcc +28 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the s chematic are not used. 3. the center of c24 is placed at 0.200? (8.20 @ 940mhz) from the center of c5. 4. the center of l4 is placed at 0.170? (6.97 @ 940mhz) from the edge of the AP603 (u1). 5. the center of c25 is placed at 0.505? (20.71 @ 940 mhz) from the center of l4. 6. the center of c5 is placed at .060? (2.46 @ 940 mhz) from the edge of the AP603 (u1). 7. the bold-faced rf trace is for the dc bias feed. th e stub?s length is approximately a ? . 8. the main rf trace is cut at component l3 and l4 for this particular reference design. 920-960 mhz application circuit performance plots w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw gain vs. output power vs. frequency cw tone, vcc = 28v, icq = 160 ma, 25 ?c 13 14 15 16 17 18 30 32 34 36 38 40 output power (dbm) gain (db) 920 mhz 940 mhz 960 mhz s11, s22 vs. frequency vcc = 28v, icq = 160 ma, 25 ?c -25 -20 -15 -10 -5 0 0.8 0.85 0.9 0.95 1 1.05 1.1 frequency (ghz) s11, s22 (db) s11 s22 efficiency vs. output power vs. frequency cw tone, vcc = 28v, icq = 160 ma, 25 ?c 0 10 20 30 40 50 14 18 22 26 30 34 38 output power (dbm) collector efficiency (% ) 920 mhz 940 mhz 960 mhz aclr1 vs. output power vs. frequency wcdma, vcc = 28v, icq = 160 ma, 25 ?c -65 -60 -55 -50 -45 -40 22 24 26 28 30 32 average output power (dbm) aclr1 (dbc) 920 mhz 940 mhz 960 mhz imd vs. output power cw 2-tone signal, 940 mhz, f = 1 mhz, 28v, 160 ma icq, 25 ?c -75 -70 -65 -60 -55 -50 26 28 30 32 34 36 output power, pep (dbm) imd (dbc) imd3l imd3u imd5 efficiency vs. output power vs. frequency wcdma, vcc = 28v, icq = 160 ma, 25 ?c 0 5 10 15 20 25 22 24 26 28 30 32 average output power (dbm) collector efficiency (% ) 920 mhz 940 mhz 960 mhz see note 3 see note 6 see note 4 see note 5 v bias v pd gnd v cc 1.8 ohm
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 5 of 12 november 2006 AP603 high dynamic range 7w 28v hbt amplifier 1930-1990 mhz application circuit (AP603-pcb1960) typical wcdma performance at 25 c at a channel power of +30 dbm frequency 1960 mhz w-cdma channel power +30 dbm power gain 12 db input return loss 19 db output return loss 6.6 db aclr -49 dbc imd3 @ +30 dbm pep -52 dbc operating current, icc 253 ma collector efficiency 14 % output p1db +38.5 dbm quiescent current, icq 160 ma vpd, vbias +5 v vcc +28 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the s chematic are not used. 3. the center of c3 is placed at 0.070? (5.98 @ 1960 mhz) from the edge of the AP603 (u1). 4. the center of c1 is placed at 0.895? (76.47 @ 1960 mhz) from the center of c3. 5. the center of c22 is placed at 0.185? (15.80 @ 1960 mhz) from the center of c1. 6. the center of c23 is placed at 0.230? (19.65 @ 1960 mhz) from the edge of the AP603 (u1). 7. the center of c19 is placed at 0.560? (47.84 @ 1960 mhz) from the center of c23. 8. the bold-faced rf trace is for the dc bias feed. 1930-1990 mhz application circuit performance plots w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw gain vs. output power vs. frequency cw tone, vcc = 28v, icq = 160 ma, 25 ?c 8 9 10 11 12 13 30 32 34 36 38 40 output power (dbm) gain (db) 1930 mhz 1960 mhz 1990 mhz s11, s22 vs. frequency vcc = 28v, icq = 160 ma, 25 ?c -25 -20 -15 -10 -5 0 1.8 1.85 1.9 1.95 2 2.05 2.1 frequency (ghz) s11, s22 (db) s11 s22 efficiency vs. output power vs. frequency cw tone, vcc = 28v, icq = 160 ma, 25 ?c 0 10 20 30 40 50 22 26 30 34 38 output power (dbm) collector efficiency (% ) 1930 mhz 1960 mhz 1990 mhz aclr1 vs. output power vs. frequency wcdma, vcc = 28v, icq = 160 ma, 25 ?c -65 -60 -55 -50 -45 -40 22 24 26 28 30 32 average output power (dbm) aclr1 (dbc) 1930 mhz 1960 mhz 1990 mhz icc vs. output power vs. frequency wcdma, vcc = 28v, icq = 160 ma, 25 ?c 175 200 225 250 275 300 22 24 26 28 30 32 average output power (dbm) collector current (m a) 1930 mhz 1960 mhz 1990 mhz efficiency vs. output power vs. frequency wcdma, vcc = 28v, icq = 160 ma, 25 ?c 0 5 10 15 20 25 22 24 26 28 30 32 average output power (dbm) collector efficiency (% ) 1930 mhz 1960 mhz 1990 mhz v bias v pd gnd v cc see note 5 see note 3 see note 6 see note 4 see note 7
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 6 of 12 november 2006 AP603 high dynamic range 7w 28v hbt amplifier 1930-1990 mhz application circuit performance plots w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw gain vs. output power vs. vcc cw tone, icq = 160 ma, 1960 mhz, 25 ?c 10 11 12 13 22 26 30 34 38 output power (dbm) gain (db) 26 v 28 v 30 v 32 v efficiency vs. output power vs. vcc cw tone, icq = 160 ma, 1960 mhz, 25 ?c 0 10 20 30 40 50 22 26 30 34 38 output power (dbm) collector efficiency (% ) 26 v 28 v 30 v 32 v aclr1 vs. output power vs. vcc wcdma, icq = 160 ma, 1960 mhz, 25 ?c -65 -60 -55 -50 -45 -40 22 24 26 28 30 32 average output power (dbm) aclr1 (dbc) 26 v 28 v 30 v 32 v efficiency vs. output power vs. vcc wcdma, icq = 160 ma, 1960 mhz, 25 ?c 0 5 10 15 20 25 22 24 26 28 30 32 average output power (dbm) collector efficiency (% ) 26 v 28 v 30 v 32 v oip3 vs. output power vs. vcc cw 2-tone signal, 1960 mhz, f = 1 mhz, icq = 160 ma, 25 ?c 30 35 40 45 50 55 26 28 30 32 34 36 output power, pep (dbm) oip3 (dbm ) 26 v 28 v 30 v 32 v imd3 vs. output power vs. vcc cw 2-tone signal, 1960 mhz, f = 1 mhz, icq = 160 ma, 25 ?c -65 -60 -55 -50 -45 -40 -35 26 28 30 32 34 36 output power, pep (dbm) imd3 (dbc) 26 v 28 v 30 v 32 v imd5 vs. output power vs. vcc cw 2-tone signal, 1960 mhz, f = 1 mhz, icq = 160 ma, 25 ?c -75 -70 -65 -60 -55 -50 26 28 30 32 34 36 output power, pep (dbm) imd5 (dbc) 26 v 28 v 30 v 32 v
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 7 of 12 november 2006 AP603 high dynamic range 7w 28v hbt amplifier 1930-1990 mhz application note: changing icq biasi ng configurations the AP603 can be configured to be operated with low er bias current by varying the bias-adjust resistor ? r2. the recommended circuit configurations shown previously in this datasheet have the device operating with a 160 ma as the quiescent current (i cq ). this biasing level represents the best tradeoff in terms of linearity and efficiency. lowering i cq will improve upon the efficiency of the device, but degr aded linearity. increasing i cq has nominal improvement upon the linearity, but will degrade the device?s efficiency. measured data shown in the plots below represents the AP603 measured and configured for 1.96 ghz applications. it is expect ed that variation of the bias current for other fre quency applications will produce similar performance results. icq (ma) r2 (ohms) vpd voltage (v) pin_vpd voltage (v) 20 4.32k 5 2.46 40 2.33k 5 2.52 80 1.24k 5 2.61 120 852 5 2.68 160 649 5 2.74 200 521 5 2.80 260 398 5 2.89 320 313 5 2.98 aclr1 vs. output power vs. icq wcdma, vcc = 28v, 1960 mhz, 25 ?c -65 -60 -55 -50 -45 -40 -35 22 24 26 28 30 32 average output power (dbm) aclr1 (dbc) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma icc vs. output power vs. icq wcdma, vcc = 28v, 1960 mhz, 25 ?c 0 100 200 300 400 22 24 26 28 30 32 average output power (dbm) collector current (m a) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma efficiency vs. output power vs. icq wcdma, vcc = 28v, 1960 mhz, 25 ?c 0 5 10 15 20 25 22 24 26 28 30 32 average output power (dbm) collector efficiency (% ) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma gain vs. output power vs. icq cw tone, vcc = 28v, 1960 mhz, 25 ?c 9 10 11 12 13 14 22 26 30 34 38 output power (dbm) gain (db) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma output power vs. input power vs. icq cw tone, vcc = 28v, 1960 mhz, 25 ?c 22 26 30 34 38 12 16 20 24 28 input power (dbm) output power (dbm ) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma efficiency vs. output power vs. icq cw tone, vcc = 28v, 1960 mhz, 25 ?c 0 10 20 30 40 50 22 26 30 34 38 output power (dbm) collector efficiency (% ) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma oip3 vs. output power vs. icq cw two-tone signal, 1960 mhz, f = 1 mhz, vcc = 28v, 25 ?c 30 35 40 45 50 55 26 28 30 32 34 36 output power, pep (dbm) oip3 (dbm ) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma imd3 vs. output power vs. icq cw two-tone signal, 1960 mhz, f = 1 mhz, vcc = 28v, 25 ?c -60 -50 -40 -30 -20 26 28 30 32 34 36 output power, pep (dbm) imd3 (dbc) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma imd5 vs. output power vs. icq cw two-tone signal, 1960 mhz, f = 1 mhz, vcc = 28v, 25 ?c -80 -70 -60 -50 -40 -30 -20 26 28 30 32 34 36 output power, pep (dbm) imd5 (dbc) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma v bias v pd gnd v cc
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 8 of 12 november 2006 AP603 high dynamic range 7w 28v hbt amplifier 2010-2025 mhz application circuit typical performance at 25 c at an output power of +30 dbm frequency 2015 mhz total output power +30 dbm power gain 12.3 db input return loss 11 db output return loss 14 db imd3 @ +30 dbm pep -48 dbc operating current, icc 230 ma collector efficiency 15.5 % output p1db +38.2 dbm quiescent current, icq 160 ma vpd, vbias +5 v vcc +28 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the s chematic are not used. 3. the center of c22 is placed at 0.185? (16.25 @ 2015 mhz) from the center of c1. 4. the center of c1 is placed at 0.705? (61.92 @ 2015 mhz) from the center of c25. 5. the center of c25 is placed at 0.140? (12.30 @ 2015 mhz) from the center of c5. 6. the center of c5 is placed at 0.125? (10.98 @ 2015 mhz) from the edge of the AP603 (u1). 7. the center of c23 is placed at 0.200? (17.57 @ 2015 mhz) from the edge of the AP603 (u1). 8. the center of c19 is placed at 0.515? (45.24 @ 2015 mhz) from the center of c23. 9. the bold-faced rf trace is for the dc bias feed. th e stub?s length is approximately a ? . 2010-2025 mhz application circuit performance plots gain vs. output power vs. frequency cw tone, vcc = 28v, icq = 160 ma, 25 ?c 8 9 10 11 12 13 30 32 34 36 38 40 output power (dbm) gain (db) 2000 mhz 2015 mhz 2025 mhz s11, s22 vs. frequency vcc = 28v, icq = 160 ma, 25 ?c -25 -20 -15 -10 -5 0 1.96 1.98 2 2.02 2.04 2.06 2.08 frequency (ghz) s11, s22 (db) s11 s22 efficiency vs. output power vs. frequency cw tone, vcc = 28v, icq = 160 ma, 25 ?c 0 10 20 30 40 50 22 26 30 34 38 output power (dbm) collector efficiency (% ) 2000 mhz 2010 mhz 2025 mhz aclr1 vs. output power vs. frequency wcdma, vcc = 28v, icq = 160 ma, 25 ?c -65 -60 -55 -50 -45 -40 22 24 26 28 30 32 average output power (dbm) aclr1 (dbc) 2000 mhz 2015 mhz 2025 mhz wcdma 3gpp tm 1+64dpch, 60% clipping, par = 8.6 db imd vs. output power cw 2-tone signal, 2015 mhz, f = 1 mhz, 28v, 160 ma icq, 25 ?c -80 -70 -60 -50 -40 -30 26 28 30 32 34 36 output power, pep (dbm) imd (dbc) imd3l imd3u imd5 efficiency vs. output power vs. frequency wcdma, vcc = 28v, icq = 160 ma, 25 ?c 0 5 10 15 20 25 22 24 26 28 30 32 average output power (dbm) collector efficiency (% ) 2000 mhz 2010 mhz 2025 mhz wcdma 3gpp tm 1+64dpch, 60% clipping, par = 8.6 db 1.8 pf see note 3 see note 6 see note 7 5.6pf see note 4 0.8pf see note 8 v bias v pd gnd v cc c2 5 0.8 pf see note 5 w= 0 .030 l = 1.000
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 9 of 12 november 2006 AP603 high dynamic range 7w 28v hbt amplifier 2110-2170 mhz application circuit (AP603-pcb2140) typical wcdma performance at 25 c at a channel power of +30 dbm frequency 2140 mhz w-cdma channel power +30 dbm power gain 11.8 db input return loss 10 db output return loss 8.2 db aclr -50 dbc imd3 @ +30 dbm pep -51 dbc operating current, icc 246 ma collector efficiency 14.6 % output p1db +38.2 dbm quiescent current, icq 160 ma vpd, vbias +5 v vcc +28 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the s chematic are not used. 3. the center of c5 is placed at 0.085? (7.92 @ 2140 mhz) from the edge of the AP603 (u1). 4. the center of c1 is placed at 0.860? (80.23 @ 2140 mhz) from the center of c5. 5. the center of c22 is placed at 0.185? (17.26 @ 2140 mhz) from the center of c1. 6. the center of c23 is placed at 0.245? (22.85 @ 2140 mhz) from the edge of the AP603 (u1). 7. the center of c19 is placed at 0.505? (47.11 @ 2140 mhz) from the center of c23. 8. the bold-faced rf trace is for the dc bias feed. th e stub?s length is approximately a ? . 2110-2170 mhz application circuit performance plots w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw gain vs. output power vs. frequency cw tone, vcc = 28v, icq = 160 ma, 25 ?c 7 8 9 10 11 12 30 32 34 36 38 40 output power (dbm) gain (db) 2110 mhz 2140 mhz 2170 mhz s11, s22 vs. frequency vcc = 28v, icq = 160 ma, 25 ?c -25 -20 -15 -10 -5 0 2 2.05 2.1 2.15 2.2 2.25 2.3 frequency (ghz) s11, s22 (db) s11 s22 efficiency vs. output power vs. frequency cw tone, vcc = 28v, icq = 160 ma, 25 ?c 0 10 20 30 40 50 22 26 30 34 38 output power (dbm) collector efficiency (%) 2110 mhz 2140 mhz 2170 mhz aclr1 vs. output power vs. frequency wcdma, vcc = 28v, icq = 160 ma, 25 ?c -65 -60 -55 -50 -45 -40 22 24 26 28 30 32 average output power (dbm) aclr1 (dbc) 2110 mhz 2140 mhz 2170 mhz icc vs. output power vs. frequency wcdma, vcc = 28v, icq = 160 ma, 25 ?c 150 175 200 225 250 275 300 22 24 26 28 30 32 average output power (dbm) collector current (m a) 2110 mhz 2140 mhz 2170 mhz efficiency vs. output power vs. frequency wcdma, vcc = 28v, icq = 160 ma, 25 ?c 0 5 10 15 20 25 22 24 26 28 30 32 average output power (dbm) collector efficiency (%) 2110 mhz 2140 mhz 2170 mhz see note 5 see note 3 see note 6 see note 4 see note 7 v bias v pd gnd v cc w = 0.030 l = 0.980
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 10 of 12 november 2006 AP603 high dynamic range 7w 28v hbt amplifier 2110-2170 mhz application circuit performance plots w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw gain vs. output power vs. temperature cw tone, vcc = 28v, icq = 160 ma, 2140 mhz 9 10 11 12 13 14 22 26 30 34 38 output power (dbm) gain (db) -40 ?c 25 ?c 85 ?c icc vs. output power vs. temperature cw tone, vcc = 28v, icq = 160 ma, 2140 mhz 100 200 300 400 500 600 22 26 30 34 38 output power (dbm) collector current (ma) -40 ?c 25 ?c 85 ?c efficiency vs. output power vs. temperature cw tone, vcc = 28v, icq = 160 ma, 2140 mhz 0 10 20 30 40 50 22 26 30 34 38 output power (dbm) collector efficiency (%) -40 ?c 25 ?c 85 ?c aclr1 vs. output power vs. temperature wcdma, vcc = 28v, icq = 160 ma, 2140 mhz -60 -55 -50 -45 -40 -35 22 24 26 28 30 32 average output power (dbm) aclr1 (dbc) -40 ?c 25 ?c 85 ?c icc vs. output power vs. temperature wcdma, vcc = 28v, icq = 160 ma, 2140 mhz 150 175 200 225 250 275 300 22 24 26 28 30 32 average output power (dbm) collector current (ma) -40 ?c 25 ?c 85 ?c efficiency vs. output power vs. temperature wcdma, vcc = 28v, icq = 160 ma, 2140 mhz 0 5 10 15 20 25 22 24 26 28 30 32 average output power (dbm) collector efficiency (%) -40 ?c 25 ?c 85 ?c gain vs. frequency vs. temperature wcdma, vcc = 28v, icq = 160 ma, +30 dbm pout 8 9 10 11 12 13 2110 2130 2150 2170 frequency (mhz) gain (db) -40 ?c 25 ?c 85 ?c aclr1 vs. output power vs. vcc wcdma, icq = 160 ma, 2140 mhz, 25 ?c -65 -60 -55 -50 -45 -40 22 24 26 28 30 32 average output power (dbm) aclr1 (dbc) 26 v 28 v 30 v 32 v efficiency vs. output power vs. vcc wcdma, icq = 160 ma, 2140 mhz, 25 ?c 0 5 10 15 20 25 22 24 26 28 30 32 average output power (dbm) collector efficiency (%) 26 v 28 v 30 v 32 v gain vs. output power vs. vcc cw tone, icq = 160 ma, 2140 mhz, 25 ?c 10 11 12 13 22 26 30 34 38 output power (dbm) gain (db) 26 v 28 v 30 v 32 v 2-carrier wcdma aclr vs. output power wcdma, 101 config, vcc = 28v, icq = 160 ma, 25 ?c -60 -50 -40 -30 22 24 26 28 30 32 total average output power (dbm) aclr (dbc) aclr2_l aclr1_l aclr_m aclr1_u aclr2_u efficiency vs. output power vs. vcc cw tone, icq = 160 ma, 2140 mhz, 25 ?c 0 10 20 30 40 50 22 26 30 34 38 output power (dbm) collector efficiency (%) 26 v 28 v 30 v 32 v oip3 vs. output power vs. vcc cw 2-tone signal, 2140 mhz, f = 1 mhz, icq = 160ma, 25 ?c 35 40 45 50 55 60 26 28 30 32 34 36 output power, pep (dbm) oip3 (dbm ) 26 v 28 v 30 v 32 v imd3 vs. output power vs. vcc cw 2-tone signal, 2140 mhz, f = 1 mhz, icq = 160ma, 25 ?c -80 -70 -60 -50 -40 -30 26 28 30 32 34 36 output power, pep (dbm) imd3 (dbc) 26 v 28 v 30 v 32 v imd5 vs. output power vs. vcc cw 2-tone signal, 2140 mhz, f = 1 mhz, icq = 160ma, 25 ?c -80 -70 -60 -50 -40 -30 26 28 30 32 34 36 output power, pep (dbm) imd5 (dbc) 26 v 28 v 30 v 32 v
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 11 of 12 november 2006 AP603 high dynamic range 7w 28v hbt amplifier 2110-2170 mhz application note: changing icq biasi ng configurations the AP603 can be configured to be operated with low er bias current by varying the bias-adjust resistor ? r2. the recommended circuit configurations shown previously in this datasheet have the device operating with a 160 ma as the quiescent current (i cq ). this biasing level represents the best tradeoff in terms of linearity and efficiency. lowering i cq will improve upon the efficiency of the device, but degr aded linearity. increasing i cq has nominal improvement upon the linearity, but will degrade the device?s efficiency. measured data shown in the plots below represents the AP603 measured and configured for 2.14 ghz applications. it is expect ed that variation of the bias current for other fre quency applications will produce similar performance results. icq (ma) r2 (ohms) vpd voltage (v) pin_vpd voltage (v) 20 4.32k 5 2.46 40 2.33k 5 2.52 80 1.24k 5 2.61 120 852 5 2.68 160 649 5 2.74 200 521 5 2.80 260 398 5 2.89 320 313 5 2.98 aclr1 vs. output power vs. icq wcdma, vcc = 28v, 2140 mhz, 25 ?c -70 -60 -50 -40 -30 22 24 26 28 30 32 average output power (dbm) aclr1 (dbc) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma icc vs. output power vs. icq wcdma, vcc = 28v, 2140 mhz, 25 ?c 0 100 200 300 400 22 24 26 28 30 32 average output power (dbm) collector current (m a) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma efficiency vs. output power vs. icq wcdma, vcc = 28v, 2140 mhz, 25 ?c 0 5 10 15 20 25 22 24 26 28 30 32 average output power (dbm) collector efficiency (%) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma gain vs. output power vs. icq cw tone, vcc = 28v, 2140 mhz, 25 ?c 9 10 11 12 13 14 22 26 30 34 38 output power (dbm) g ain (db) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma output power vs. input power vs. icq cw tone, vcc = 28v, 2140 mhz, 25 ?c 22 26 30 34 38 12 16 20 24 28 input power (dbm) output power (dbm ) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma efficiency vs. output power vs. icq cw tone, vcc = 28v, 2140 mhz, 25 ?c 0 10 20 30 40 50 22 26 30 34 38 output power (dbm) collector efficiency (% ) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma oip3 vs. output power vs. icq cw 2-tone signal, 2140 mhz, f = 1 mhz, vcc = 28v, 25 ?c 30 35 40 45 50 55 60 26 28 30 32 34 36 output power, pep (dbm) oip3 (dbm ) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma imd3 vs. output power vs. icq cw 2-tone signal, 2140 mhz, f = 1 mhz, vcc = 28v, 25 ?c -80 -70 -60 -50 -40 -30 -20 26 28 30 32 34 36 output power, pep (dbm) imd3 (dbc) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma imd5 vs. output power vs. icq cw 2-tone signal, 2140 mhz, f = 1 mhz, vcc = 28v, 25 ?c -80 -70 -60 -50 -40 -30 -20 26 28 30 32 34 36 output power, pep (dbm) imd5 (dbc) 20 ma 40 ma 80 ma 120 ma 160 ma 200 ma 260 ma 320 ma v bias v pd gnd v cc
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 12 of 12 november 2006 AP603 high dynamic range 7w 28v hbt amplifier AP603-f mechanical information this package is lead-free and rohs-compliant. it i s compatible with both lead-free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the pla ting material on the pins is annealed matte tin ove r copper. drawing outline drawing mounting configuration / land pattern thermal specifications parameter rating operating case temperature -40 to +85 c thermal resistance, rth 8.7 c / w junction temperature, t j for 10 6 hours mttf 170 oc product marking the component will be laser marked with an ?AP603-f? product label with an alphanumeric lot code on the top surface of the package. tape and reel specifications for this part will be located on the website in the ?application notes? section. functional pin layout pin function 1 pin_vbias 2, 3, 7, 8, 12, 13 n/c or gnd 4, 5, 6 rf in 9, 10, 11 rf output / vcc 14 pin_vpd backside paddle gnd msl / esd rating esd rating: tbd value: tbd test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: tbd standard: jedec standard j-std-020

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